Infineon IPB020N10N5ATMA1 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, the Infineon IPB020N10N5ATMA1, a 100V OptiMOS 5 Power MOSFET, emerges as a premier solution engineered for superior performance in a wide array of power conversion applications.

This device is a testament to Infineon's advanced OptiMOS 5 technology, which is specifically tailored to minimize key losses in switching power supplies. Its cornerstone feature is an exceptionally low figure-of-merit (FOM), achieved by optimally balancing the crucial parameters of on-state resistance (RDS(on)) and total gate charge (Qg). With a maximum RDS(on) of just 2.0 mΩ, conduction losses are dramatically reduced, allowing for higher load currents with less heat generation. Simultaneously, the low gate charge ensures swift switching transitions, which directly cuts switching losses and enables operation at higher frequencies. This dual reduction in losses is pivotal for achieving peak efficiency, particularly in demanding high-frequency circuits.

The benefits of these characteristics are most evident in applications such as server and telecom power supplies, industrial motor drives, and high-performance DC-DC converters. The ability to operate efficiently at higher frequencies allows designers to use smaller passive components like inductors and capacitors, leading to a significant reduction in the overall system size and weight without compromising on performance or thermal management. The 100V voltage rating provides a comfortable margin of safety in 48V intermediate bus architectures and OR-ing (redundancy) applications, common in modern data centers.

Furthermore, the IPB020N10N5ATMA1 is offered in the space-saving D2PAK (TO-263) package, which offers an excellent power-to-footprint ratio and robust thermal performance. This makes it an ideal choice for designs where board space is at a premium but thermal dissipation cannot be overlooked. The technology also boasts enhanced robustness and reliability, ensuring long-term operational stability under strenuous conditions.

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The Infineon IPB020N10N5ATMA1 100V OptiMOS 5 MOSFET sets a new benchmark for efficiency and power density. By masterfully combining an ultra-low RDS(on) with minimal switching losses, it empowers engineers to create next-generation power conversion systems that are not only more efficient but also more compact and reliable, paving the way for future innovations in power electronics.

Keywords:

1. High Efficiency

2. Low RDS(on)

3. OptiMOS 5 Technology

4. Power Density

5. Switching Performance