Infineon BSC028N06LS3: A High-Performance OptiMOS Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced designs, from server power supplies and motor drives to DC-DC converters, lies the power MOSFET. The Infineon BSC028N06LS3 stands out as a prime example of engineering excellence, offering a compelling blend of low losses, high switching speed, and robust performance.
As part of Infineon's esteemed OptiMOS™ 3 family, this N-channel MOSFET is engineered from the ground up for optimal performance in low-voltage applications. Its primary claim to fame is its exceptionally low on-state resistance (R DS(on)) of just 2.8 mΩ (max. at V GS = 10 V). This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher efficiency, less heat generation, and the potential for cooler-running systems. For designers, this often means they can use a smaller heatsink or even eliminate it entirely, reducing both system size and cost.
Beyond its stellar static performance, the BSC028N06LS3 excels in dynamic operation. It features low gate charge (Q G) and outstanding switching characteristics. These attributes ensure rapid turn-on and turn-off times, which are critical for high-frequency switching applications. Faster switching reduces switching losses, further boosting overall efficiency and enabling operation at higher frequencies. This allows for the use of smaller passive components like inductors and capacitors, pushing the boundaries of power density.
Housed in a compact, industry-standard SuperSO8 package, this MOSFET offers an excellent power-to-footprint ratio. The package is designed for superior thermal performance, effectively transferring heat away from the silicon die to the printed circuit board (PCB). With a drain-source voltage (V DS) rating of 60 V and a continuous drain current (I D) of 70 A, it provides ample headroom for a wide array of demanding 12 V to 48 V systems. Furthermore, it is 100% avalanche tested, guaranteeing ruggedness and reliability under extreme operating conditions, such as inductive load switching.
ICGOOODFIND: The Infineon BSC028N06LS3 is a benchmark in power MOSFET technology, perfectly balancing ultra-low R DS(on) for minimal conduction losses and superior switching performance for high-frequency operation. Its robust construction and thermal efficiency make it an indispensable component for designers aiming to create compact, efficient, and reliable power conversion systems.
Keywords: Low R DS(on), High Efficiency, OptiMOS™ 3, Fast Switching, SuperSO8 Package.
