Infineon IPD70R950CE 950V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronic systems demands continuous innovation in power semiconductor technology. Addressing this need, the Infineon IPD70R950CE stands out as a high-performance 950V CoolMOS™ power transistor engineered to excel in demanding applications. This device combines an advanced superjunction structure with optimized packaging, delivering a compelling blend of ultra-low on-state resistance (RDS(on)) and exceptional switching performance.

A key strength of the IPD70R950CE is its remarkably low RDS(on) of 70 mΩ, which is achieved through Infineon's proven CoolMOS™ technology. This low resistance directly translates to reduced conduction losses, enabling higher efficiency operation, especially in high-power circuits. The 950V drain-source voltage rating provides a significant safety margin, enhancing system reliability in environments with voltage spikes and transients, common in industrial motor drives, telecom and server power supplies (PSUs), and renewable energy systems like photovoltaic inverters.

Furthermore, the transistor is designed for fast and robust switching. Its low gate charge (Qg) and output capacitance (Coss) minimize switching losses, allowing for operation at higher frequencies. This capability is crucial for designers aiming to shrink the size of magnetic components and capacitors, thereby increasing the overall power density of the end product. The device also features an integrated fast body diode, which improves hard commutation robustness, a critical factor in inductive switching scenarios such as power factor correction (PFC) stages.

The package itself, the TO-220, offers a robust and industry-standard footprint, ensuring both mechanical reliability and effective thermal management. When paired with an appropriate heatsink, the IPD70R950CE can effectively dissipate heat, maintaining performance under continuous high-stress conditions.

ICGOOODFIND: The Infineon IPD70R950CE is a superior 950V power MOSFET that sets a high bar for efficiency and power density. Its optimal balance of ultra-low RDS(on), high voltage capability, and fast switching characteristics makes it an ideal solution for advanced switch-mode power supplies, industrial power systems, and clean energy applications, helping engineers create more compact and efficient designs.

Keywords: High Efficiency, 950V Rating, Ultra-Low RDS(on), Fast Switching, Power Density